AP3N2R8MT PDF and Equivalents Search

 

AP3N2R8MT Specs and Replacement

Type Designator: AP3N2R8MT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: PMPAK5X6

AP3N2R8MT substitution

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AP3N2R8MT datasheet

 ..1. Size:161K  ape
ap3n2r8mt.pdf pdf_icon

AP3N2R8MT

AP3N2R8MT Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D 100% Rg & UIS Test BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Ultra Low On-resistance ID4 105A RoHS Compliant & Halogen-Free G D D D Description S D AP3N2R8 series are from Advanced Power innovated design and silicon process technology to achieve the lowe... See More ⇒

 7.1. Size:167K  ape
ap3n2r8p.pdf pdf_icon

AP3N2R8MT

AP3N2R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N2R8 seriesare fromAdvanced Power innovated design a... See More ⇒

 7.2. Size:206K  ape
ap3n2r8h.pdf pdf_icon

AP3N2R8MT

AP3N2R8H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S G Description D S TO-252(H) AP4604 series arefrom Advanced Power innovated design AP3N2R8 seriesare fromAdvanced Power... See More ⇒

 8.1. Size:163K  ape
ap3n2r2mt.pdf pdf_icon

AP3N2R8MT

AP3N2R2MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP3N2R2 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po... See More ⇒

Detailed specifications: AP10TN028YT, AP0903GYT, AP3P7R0EMT, AP3P3R0MT, AP3P010AMT, AP3NR85CMT, AP3N7R2MT, AP3N3R3MT, IRF740, AP3N2R4MT, AP3N2R2MT, AP3N1R8MT-L, AP3N1R8MT, AP3N1R7MT, AP3N1R0MT, AP3D5R0MT, AP3C023AMT

Keywords - AP3N2R8MT MOSFET specs

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