AP3N1R8MT-L MOSFET Datasheet: N-Ch, 30V, 40.6A. Full specification with pinout and replacement list

AP3N1R8MT-L Specs and Replacement

Type Designator: AP3N1R8MT-L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 820 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00189 Ohm

Package: PMPAK5X6

AP3N1R8MT-L substitution

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AP3N1R8MT-L datasheet

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AP3N1R8MT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D D Description D AP3N1R8 series are from Advanced Power innovated design and silicon process technology to achieve th... See More ⇒

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AP3N1R8MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D Description D AP3N1R8 series are from Advanced Power innovated design and D silicon process technology to achieve the ... See More ⇒

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AP3N1R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N1R8 seriesare fromAdvanced Power innovated ... See More ⇒

Detailed specifications: AP3P3R0MT, AP3P010AMT, AP3NR85CMT, AP3N7R2MT, AP3N3R3MT, AP3N2R8MT, AP3N2R4MT, AP3N2R2MT, IRF540N, AP3N1R8MT, AP3N1R7MT, AP3N1R0MT, AP3D5R0MT, AP3C023AMT, AP3A010MT, AP3A010AMT, AP3700MT