AP3N1R8MT-L - описание и поиск аналогов

 

Аналоги AP3N1R8MT-L. Основные параметры


   Наименование производителя: AP3N1R8MT-L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 40.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 820 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.00189 Ohm
   Тип корпуса: PMPAK5X6
 

 Аналог (замена) для AP3N1R8MT-L

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP3N1R8MT-L даташит

 ..1. Size:319K  ape
 ap3n1r8mt-l.pdf pdf_icon

AP3N1R8MT-L

AP3N1R8MT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D D Description D AP3N1R8 series are from Advanced Power innovated design and silicon process technology to achieve th

 5.1. Size:68K  1
 ap3n1r8mt.pdf pdf_icon

AP3N1R8MT-L

AP3N1R8MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D Description D AP3N1R8 series are from Advanced Power innovated design and D silicon process technology to achieve the

 5.2. Size:163K  ape
 ap3n1r8mt.pdf pdf_icon

AP3N1R8MT-L

AP3N1R8MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D Description D AP3N1R8 series are from Advanced Power innovated design and D silicon process technology to achieve the

 7.1. Size:205K  ape
 ap3n1r8p.pdf pdf_icon

AP3N1R8MT-L

AP3N1R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N1R8 seriesare fromAdvanced Power innovated

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP3P3R0MT , AP3P010AMT , AP3NR85CMT , AP3N7R2MT , AP3N3R3MT , AP3N2R8MT , AP3N2R4MT , AP3N2R2MT , IRF540N , AP3N1R8MT , AP3N1R7MT , AP3N1R0MT , AP3D5R0MT , AP3C023AMT , AP3A010MT , AP3A010AMT , AP3700MT .

History: AGM208D | AGM304D | AGM1075D | AGM304AP-B | CTM09N20 | SL8N100 | AGM12N10A

 

 
Back to Top

 


 
.