All MOSFET. IRFI640A Datasheet

 

IRFI640A Datasheet and Replacement


   Type Designator: IRFI640A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 44 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO262
 

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IRFI640A Datasheet (PDF)

 ..1. Size:212K  1
 irfi640a irfw640a.pdf pdf_icon

IRFI640A

 7.1. Size:1146K  international rectifier
 irfi640gpbf.pdf pdf_icon

IRFI640A

PD- 95420IRFI640GPbF Lead-Free06/16/04Document Number: 91150 www.vishay.com1IRFI640GPbFDocument Number: 91150 www.vishay.com2IRFI640GPbFDocument Number: 91150 www.vishay.com3IRFI640GPbFDocument Number: 91150 www.vishay.com4IRFI640GPbFDocument Number: 91150 www.vishay.com5IRFI640GPbFDocument Number: 91150 www.vishay.com6IRFI640GPbFDocument Num

 7.2. Size:172K  international rectifier
 irfi640g.pdf pdf_icon

IRFI640A

 7.3. Size:1799K  vishay
 irfi640g sihfi640g.pdf pdf_icon

IRFI640A

IRFI640G, SiHFI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.18f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 70COMPLIANT Dynamic dV/dt RatingQgs (nC) 13 Low Thermal ResistanceQgd (nC) 39 Lead (Pb)-fr

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Datasheet: IRFI620A , IRFI620G , IRFI624A , IRFI624G , IRFI630A , IRFI630G , IRFI634A , IRFI634G , IRF9540N , IRFI640G , IRFI644A , IRFI644G , IRFI710A , IRFI720A , IRFI720G , IRFI730A , IRFI730G .

History: 2SK1795 | FDB15N50 | SFR9110

Keywords - IRFI640A MOSFET datasheet

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