IRFI640A Specs and Replacement

Type Designator: IRFI640A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO262

IRFI640A substitution

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IRFI640A datasheet

 ..1. Size:212K  1
 irfi640a irfw640a.pdf pdf_icon

IRFI640A

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 7.1. Size:1146K  international rectifier
 irfi640gpbf.pdf pdf_icon

IRFI640A

PD- 95420 IRFI640GPbF Lead-Free 06/16/04 Document Number 91150 www.vishay.com 1 IRFI640GPbF Document Number 91150 www.vishay.com 2 IRFI640GPbF Document Number 91150 www.vishay.com 3 IRFI640GPbF Document Number 91150 www.vishay.com 4 IRFI640GPbF Document Number 91150 www.vishay.com 5 IRFI640GPbF Document Number 91150 www.vishay.com 6 IRFI640GPbF Document Num... See More ⇒

 7.2. Size:172K  international rectifier
 irfi640g.pdf pdf_icon

IRFI640A

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 7.3. Size:1799K  vishay
 irfi640g sihfi640g.pdf pdf_icon

IRFI640A

IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.18 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 70 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 13 Low Thermal Resistance Qgd (nC) 39 Lead (Pb)-fr... See More ⇒

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Detailed specifications: IRFI620A, IRFI620G, IRFI624A, IRFI624G, IRFI630A, IRFI630G, IRFI634A, IRFI634G, IRF2807, IRFI640G, IRFI644A, IRFI644G, IRFI710A, IRFI720A, IRFI720G, IRFI730A, IRFI730G

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.