AP2C016LMT Datasheet. Specs and Replacement

Type Designator: AP2C016LMT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: PMPAK5X6

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AP2C016LMT substitution

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AP2C016LMT datasheet

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AP2C016LMT

AP2C016LMT Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 D1 D2 D2 Capable of 2.5V Gate Drive N-CH BVDSS 20V Good Thermal Performance RDS(ON) 16m Fast Switching Performance ID3 12A RoHS Compliant & Halogen-Free P-CH BVDSS -20V RDS(ON) 32m S1 G1 S2 G2 Description ID3 -8.8A AP2C016L series are from Advanced Po... See More ⇒

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AP2C016LMT

AP2C018LM Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive N-CH BVDSS 20V D2 D2 Low Gate Charge D1 RDS(ON) 18m D1 Fast Switching Performance ID3 8.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 45m Description ID3 -5.5A AP2C018L series are from Advanced ... See More ⇒

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AP2C016LMT

AP2C030LM Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive N-CH BVDSS 20V D2 D2 Low Gate Charge D1 RDS(ON) 30m D1 Fast Switching Performance ID3 6.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 50m Description ID3 -5.2A AP2C030L series are from Advanced ... See More ⇒

Detailed specifications: AP3N1R8MT, AP3N1R7MT, AP3N1R0MT, AP3D5R0MT, AP3C023AMT, AP3A010MT, AP3A010AMT, AP3700MT, IRFP260N, AP2606CMT, AP2602MT, AP1A003GMT, AP10TN5R5MT, AP10TN5R5LMT, AP10TN028MT, AP10TN012LMT, AP10TN010CMT

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