AP0704GMT MOSFET. Datasheet pdf. Equivalent
Type Designator: AP0704GMT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 20.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 235 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: PMPAK5X6
AP0704GMT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP0704GMT Datasheet (PDF)
ap0704gmt.pdf
AP0704GMT-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 7m Low On-resistance ID 62AG RoHS Compliant & Halogen-FreeSDDescriptionDAP0704 series are from Advanced Power innova
ap0704gmt-hf.pdf
AP0704GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 7m Low On-resistance ID 62AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
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