AP0704GMT Specs and Replacement
Type Designator: AP0704GMT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 235 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: PMPAK5X6
AP0704GMT substitution
- MOSFET ⓘ Cross-Reference Search
AP0704GMT datasheet
ap0704gmt.pdf
AP0704GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 7m Low On-resistance ID 62A G RoHS Compliant & Halogen-Free S D Description D AP0704 series are from Advanced Power innova... See More ⇒
ap0704gmt-hf.pdf
AP0704GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 7m Low On-resistance ID 62A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,... See More ⇒
Detailed specifications: AP10TN028MT, AP10TN012LMT, AP10TN010CMT, AP10TN008CMT, AP10TN004LCMT, AP10TN004CMT, AP10N012MT, AP0904GMT, IRF9540, AP0504GMT, AP0203GMT, AP3N2R2MT-L, AP10TN008CMT-L, AP0203GMT-L, AP3P7R0EP, AP3N4R0P, AP3N2R8P
Keywords - AP0704GMT MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: RTR025N05 | SUN0460D
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