AP0203GMT Specs and Replacement
Type Designator: AP0203GMT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 820 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
Package: PMPAK5X6
AP0203GMT substitution
- MOSFET ⓘ Cross-Reference Search
AP0203GMT datasheet
ap0203gmt.pdf
AP0203GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155A G RoHS Compliant & Halogen-Free S D D Description D AP0203 series are from Advanced Power innovated design and D silicon process technology to achieve... See More ⇒
ap0203gmt-l.pdf
AP0203GMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155A G RoHS Compliant & Halogen-Free S D D D Description D AP0203 series are from Advanced Power innovated design and silicon process technology to achieve ... See More ⇒
ap0203gmt-hf.pdf
AP0203GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin... See More ⇒
nceap020n10ll.pdf
NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g... See More ⇒
Detailed specifications: AP10TN010CMT, AP10TN008CMT, AP10TN004LCMT, AP10TN004CMT, AP10N012MT, AP0904GMT, AP0704GMT, AP0504GMT, 2SK3878, AP3N2R2MT-L, AP10TN008CMT-L, AP0203GMT-L, AP3P7R0EP, AP3N4R0P, AP3N2R8P, AP3N1R8P, AP3N020P
Keywords - AP0203GMT MOSFET specs
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