Справочник MOSFET. AP0203GMT

 

AP0203GMT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP0203GMT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 38 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11.5 ns
   Cossⓘ - Выходная емкость: 820 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
   Тип корпуса: PMPAK5X6
     - подбор MOSFET транзистора по параметрам

 

AP0203GMT Datasheet (PDF)

 ..1. Size:192K  ape
ap0203gmt.pdfpdf_icon

AP0203GMT

AP0203GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP0203 series are from Advanced Power innovated design andDsilicon process technology to achieve

 0.1. Size:311K  ape
ap0203gmt-l.pdfpdf_icon

AP0203GMT

AP0203GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAP0203 series are from Advanced Power innovated design andsilicon process technology to achieve

 0.2. Size:95K  ape
ap0203gmt-hf.pdfpdf_icon

AP0203GMT

AP0203GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin

 9.1. Size:747K  ncepower
nceap020n10ll.pdfpdf_icon

AP0203GMT

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BRCS030N06SBD | IRLML9301TRPBF | STP20NM60FP | AUIRFZ34N | 2SK3296-S | 2N6760JANTXV | RU7550S

 

 
Back to Top

 


 
.