Справочник MOSFET. AP0203GMT

 

AP0203GMT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP0203GMT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 38 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11.5 ns
   Cossⓘ - Выходная емкость: 820 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
   Тип корпуса: PMPAK5X6

 Аналог (замена) для AP0203GMT

 

 

AP0203GMT Datasheet (PDF)

 ..1. Size:192K  ape
 ap0203gmt.pdf

AP0203GMT AP0203GMT

AP0203GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP0203 series are from Advanced Power innovated design andDsilicon process technology to achieve

 0.1. Size:311K  ape
 ap0203gmt-l.pdf

AP0203GMT AP0203GMT

AP0203GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAP0203 series are from Advanced Power innovated design andsilicon process technology to achieve

 0.2. Size:95K  ape
 ap0203gmt-hf.pdf

AP0203GMT AP0203GMT

AP0203GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin

 9.1. Size:747K  ncepower
 nceap020n10ll.pdf

AP0203GMT AP0203GMT

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g

 9.2. Size:542K  ncepower
 nceap020n85ll.pdf

AP0203GMT AP0203GMT

NCEAP020N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =295ADS Duniquely optimized to provide the most efficient high frequencyR =1.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent ga

 9.3. Size:967K  ncepower
 nceap020n60gu.pdf

AP0203GMT AP0203GMT

http://www.ncepower.comNCEAP020N60GUNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP020N60GU uses Super Trench II technology that is V =60V,I =230ADS Duniquely optimized to provide the most efficient high frequencyR =1.8 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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