All MOSFET. AP2N050H Datasheet

 

AP2N050H Datasheet and Replacement


   Type Designator: AP2N050H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 14.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO252
 

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AP2N050H Datasheet (PDF)

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AP2N050H

AP2N050HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 50m Fast Switching Characteristic ID 14.8AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare fromAdvanced Power innovated designAP2N050series arefrom Advanced Power innovated

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AP2N050H

AP2N050GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID3 4AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP2N050 series are from Advanced Power innovated design andsilicon process technology to achieve th

 9.1. Size:189K  ape
ap2n075en.pdf pdf_icon

AP2N050H

AP2N075ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 75m Fast Switching Performance ID 3.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2N075E series are from Advanced Power innovated design andGsilicon process technology to achiev

 9.2. Size:210K  ape
ap2n030ey.pdf pdf_icon

AP2N050H

AP2N030EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 34mD Fast Switching Performance ID3 6.3AGD RoHS Compliant & Halogen-FreeSOT-26DDDescriptionAP2N030E series are from Advanced Power innovated design andGsilicon process technology

Datasheet: AP3C010H , AP3A020Y , AP3990S , AP3700Y , AP30T10GS , AP30T10GI , AP30T10GH , AP30P10GH , 10N65 , AP2910EC4 , AP2904EC4 , AP25N170I , AP20WN170P , AP20WN170J , AP20WN170I , AP20WN170H , AP20T15GI .

History: SFG08R16DF | HSH15810 | 50N06L-TA3-T | MSW16N50 | CJ2302S | IPP126N10N3G | WMO18N65EM

Keywords - AP2N050H MOSFET datasheet

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