AP2N050H PDF and Equivalents Search

 

AP2N050H Specs and Replacement

Type Designator: AP2N050H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 14.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO252

AP2N050H substitution

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AP2N050H datasheet

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 ap2n050h.pdf pdf_icon

AP2N050H

AP2N050H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 50m Fast Switching Characteristic ID 14.8A G G RoHS Compliant & Halogen-Free S S Description AP4604 seriesare fromAdvanced Power innovated design AP2N050series arefrom Advanced Power innovated ... See More ⇒

 7.1. Size:132K  ape
 ap2n050g.pdf pdf_icon

AP2N050H

AP2N050G Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID3 4A S RoHS Compliant & Halogen-Free D SOT-89 G Description D AP2N050 series are from Advanced Power innovated design and silicon process technology to achieve th... See More ⇒

 9.1. Size:189K  ape
 ap2n075en.pdf pdf_icon

AP2N050H

AP2N075EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 75m Fast Switching Performance ID 3.5A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2N075E series are from Advanced Power innovated design and G silicon process technology to achiev... See More ⇒

 9.2. Size:210K  ape
 ap2n030ey.pdf pdf_icon

AP2N050H

AP2N030EY Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 34m D Fast Switching Performance ID3 6.3A G D RoHS Compliant & Halogen-Free SOT-26 D D Description AP2N030E series are from Advanced Power innovated design and G silicon process technology ... See More ⇒

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Detailed specifications: AP3C010H, AP3A020Y, AP3990S, AP3700Y, AP30T10GS, AP30T10GI, AP30T10GH, AP30P10GH, 4N60, AP2910EC4, AP2904EC4, AP25N170I, AP20WN170P, AP20WN170J, AP20WN170I, AP20WN170H, AP20T15GI

Keywords - AP2N050H MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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