All MOSFET. AP2910EC4 Datasheet

 

AP2910EC4 Datasheet and Replacement


   Type Designator: AP2910EC4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4000 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
   Package: WLCSP
 

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AP2910EC4 Datasheet (PDF)

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AP2910EC4

AP2910EC4Halogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive VSSS 24V Ultra-small Package Outline RSS(ON) 22.5m Protection Diode Built-in IS 9A RoHS Compliant & Halogen-FreeDescriptionAP2910 series are from Advanced Power innovated designand silicon process technology to achieve the lowest

Datasheet: AP3A020Y , AP3990S , AP3700Y , AP30T10GS , AP30T10GI , AP30T10GH , AP30P10GH , AP2N050H , STF13NM60N , AP2904EC4 , AP25N170I , AP20WN170P , AP20WN170J , AP20WN170I , AP20WN170H , AP20T15GI , AP1A003P .

History: TPCF8105

Keywords - AP2910EC4 MOSFET datasheet

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