AP2910EC4 PDF and Equivalents Search

 

AP2910EC4 Specs and Replacement

Type Designator: AP2910EC4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4000 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm

Package: WLCSP

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AP2910EC4 datasheet

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AP2910EC4

AP2910EC4 Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive VSSS 24V Ultra-small Package Outline RSS(ON) 22.5m Protection Diode Built-in IS 9A RoHS Compliant & Halogen-Free Description AP2910 series are from Advanced Power innovated design and silicon process technology to achieve the lowest ... See More ⇒

Detailed specifications: AP3A020Y, AP3990S, AP3700Y, AP30T10GS, AP30T10GI, AP30T10GH, AP30P10GH, AP2N050H, IRFP250, AP2904EC4, AP25N170I, AP20WN170P, AP20WN170J, AP20WN170I, AP20WN170H, AP20T15GI, AP1A003P

Keywords - AP2910EC4 MOSFET specs

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