AP18P10AGH PDF and Equivalents Search

 

AP18P10AGH Specs and Replacement

Type Designator: AP18P10AGH

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO252

AP18P10AGH substitution

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AP18P10AGH datasheet

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 ap18p10agh.pdf pdf_icon

AP18P10AGH

AP18P10AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching... See More ⇒

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 ap18p10aghj-hf.pdf pdf_icon

AP18P10AGH

AP18P10AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching... See More ⇒

 5.1. Size:165K  ape
 ap18p10agj.pdf pdf_icon

AP18P10AGH

AP18P10AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching... See More ⇒

 7.1. Size:174K  ape
 ap18p10gh.pdf pdf_icon

AP18P10AGH

AP18P10GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-r... See More ⇒

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Detailed specifications: AP25N170I, AP20WN170P, AP20WN170J, AP20WN170I, AP20WN170H, AP20T15GI, AP1A003P, AP18P10AGJ, IRF520, AP16T10GH, AP15T15GH, AP15P10GI, AP14SL50W, AP14SL50I, AP14SL50H, AP13N50R, AP10TN9R0P

Keywords - AP18P10AGH MOSFET specs

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