AP18P10AGH - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP18P10AGH
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 115 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
Тип корпуса: TO252
Аналог (замена) для AP18P10AGH
AP18P10AGH Datasheet (PDF)
ap18p10agh.pdf

AP18P10AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching
ap18p10aghj-hf.pdf

AP18P10AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching
ap18p10agj.pdf

AP18P10AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching
ap18p10gh.pdf

AP18P10GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-r
Другие MOSFET... AP25N170I , AP20WN170P , AP20WN170J , AP20WN170I , AP20WN170H , AP20T15GI , AP1A003P , AP18P10AGJ , CS150N03A8 , AP16T10GH , AP15T15GH , AP15P10GI , AP14SL50W , AP14SL50I , AP14SL50H , AP13N50R , AP10TN9R0P .
History: 2SK2912L | CEP01N65 | 2SK325 | RFP30P05 | WMN14N65C4 | P1610AK | VS4620DP-G
History: 2SK2912L | CEP01N65 | 2SK325 | RFP30P05 | WMN14N65C4 | P1610AK | VS4620DP-G



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