AP10TN135H PDF and Equivalents Search

 

AP10TN135H Specs and Replacement

Type Designator: AP10TN135H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: TO252

AP10TN135H substitution

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AP10TN135H datasheet

 ..1. Size:201K  ape
 ap10tn135h.pdf pdf_icon

AP10TN135H

AP10TN135H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description G AP10TN135 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology... See More ⇒

 5.1. Size:222K  ape
 ap10tn135m.pdf pdf_icon

AP10TN135H

AP10TN135M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D Fast Switching Characteristic D RDS(ON) 135m D Low Gate Charge ID 3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology t... See More ⇒

 5.2. Size:166K  ape
 ap10tn135j.pdf pdf_icon

AP10TN135H

AP10TN135J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description AP10TN135 series are from Advanced Power innovated design and G D S silicon process technology to achieve... See More ⇒

 5.3. Size:188K  ape
 ap10tn135n.pdf pdf_icon

AP10TN135H

AP10TN135N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Fast Switching Characteristic RDS(ON) 135m Low Gate Charge ID 3A S RoHS Compliant & Halogen-Free SOT-23 G Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology to achieve the... See More ⇒

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Detailed specifications: AP14SL50H, AP13N50R, AP10TN9R0P, AP10TN6R0P, AP10TN6R0I, AP10TN135P, AP10TN135JB, AP10TN135J, IRFZ46N, AP10TN040P, AP10TN040H, AP10TN003S, AP10TN003R, AP10TN003P, AP10TN003I, AP10P230H, AP10P10GJ

Keywords - AP10TN135H MOSFET specs

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