AP10TN135H - описание и поиск аналогов

 

AP10TN135H. Аналоги и основные параметры

Наименование производителя: AP10TN135H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 20.8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 27 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm

Тип корпуса: TO252

Аналог (замена) для AP10TN135H

- подборⓘ MOSFET транзистора по параметрам

 

AP10TN135H даташит

 ..1. Size:201K  ape
ap10tn135h.pdfpdf_icon

AP10TN135H

AP10TN135H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description G AP10TN135 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology

 5.1. Size:222K  ape
ap10tn135m.pdfpdf_icon

AP10TN135H

AP10TN135M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D Fast Switching Characteristic D RDS(ON) 135m D Low Gate Charge ID 3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology t

 5.2. Size:166K  ape
ap10tn135j.pdfpdf_icon

AP10TN135H

AP10TN135J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description AP10TN135 series are from Advanced Power innovated design and G D S silicon process technology to achieve

 5.3. Size:188K  ape
ap10tn135n.pdfpdf_icon

AP10TN135H

AP10TN135N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Fast Switching Characteristic RDS(ON) 135m Low Gate Charge ID 3A S RoHS Compliant & Halogen-Free SOT-23 G Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology to achieve the

Другие MOSFET... AP14SL50H , AP13N50R , AP10TN9R0P , AP10TN6R0P , AP10TN6R0I , AP10TN135P , AP10TN135JB , AP10TN135J , IRFZ46N , AP10TN040P , AP10TN040H , AP10TN003S , AP10TN003R , AP10TN003P , AP10TN003I , AP10P230H , AP10P10GJ .

History: IPD220N06L3

 

 

 

 

↑ Back to Top
.