AP10P10GJ MOSFET Datasheet: P-Ch, 100V, 5.7A. Full specification with pinout and replacement list

AP10P10GJ Specs and Replacement

Type Designator: AP10P10GJ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO251

AP10P10GJ substitution

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AP10P10GJ datasheet

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AP10P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best G D S combination of fast switchi... See More ⇒

6.1. Size:101K ape
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AP10P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best G D S combination of fast switch... See More ⇒

6.2. Size:54K ape
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AP10P10GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100V D Lower Gate Charge RDS(ON) 500m S Fast Switching Characteristic ID - 1.65A D RoHS Compliant & Halogen-Free SOT-223 G Description D AP10P10 series are from Advanced Power innovated design and silicon process technology ... See More ⇒

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