All MOSFET. AP02N60H-HF Datasheet

 

AP02N60H-HF Datasheet and Replacement


   Type Designator: AP02N60H-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO252
 

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AP02N60H-HF Datasheet (PDF)

 ..1. Size:98K  ape
ap02n60h-hf ap02n60j-hf.pdf pdf_icon

AP02N60H-HF

AP02N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS CompliantSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC

 4.1. Size:246K  ape
ap02n60h-h ap02n60j-h.pdf pdf_icon

AP02N60H-HF

AP02N60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4AG Simple Drive RequirementSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications

 4.2. Size:65K  ape
ap02n60h-h-hf ap02n60j-h-hf.pdf pdf_icon

AP02N60H-HF

AP02N60H/J-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700VD Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4AG RoHS CompliantSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications and

 6.1. Size:102K  ape
ap02n60h ap02n60j.pdf pdf_icon

AP02N60H-HF

AP02N60H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6AGSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC/DC converters. Theth

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - AP02N60H-HF MOSFET datasheet

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