Справочник MOSFET. AP02N60H-HF

 

AP02N60H-HF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP02N60H-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 27 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

AP02N60H-HF Datasheet (PDF)

 ..1. Size:98K  ape
ap02n60h-hf ap02n60j-hf.pdfpdf_icon

AP02N60H-HF

AP02N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS CompliantSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC

 4.1. Size:246K  ape
ap02n60h-h ap02n60j-h.pdfpdf_icon

AP02N60H-HF

AP02N60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4AG Simple Drive RequirementSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications

 4.2. Size:65K  ape
ap02n60h-h-hf ap02n60j-h-hf.pdfpdf_icon

AP02N60H-HF

AP02N60H/J-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700VD Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4AG RoHS CompliantSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications and

 6.1. Size:102K  ape
ap02n60h ap02n60j.pdfpdf_icon

AP02N60H-HF

AP02N60H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6AGSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC/DC converters. Theth

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ZXMN0545G4 | SE4060 | IPA600N25NM3S

 

 
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