All MOSFET. AP05FN50I Datasheet

 

AP05FN50I Datasheet and Replacement


   Type Designator: AP05FN50I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO220F
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AP05FN50I Datasheet (PDF)

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AP05FN50I

AP05FN50IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast trr Performance D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.6 Simple Drive Requirement ID 4.5AGSDescriptionAP05FN50 provide high blocking voltage to overcome voltage surgeGand sag in the toughest power system with the best combination of fast D

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AP05FN50I

AP05FN50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast trr Performance D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.8 Simple Drive Requirement ID 4.4AG RoHS Compliant & Halogen-FreeSDescriptionAP05FN50 series are specially designed as main switching devicesGfor universal 90~265VAC off-line AC/D

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15 | LSC65R280HT | 2SK3700

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