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AP05FN50I Spec and Replacement


   Type Designator: AP05FN50I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO220F

 AP05FN50I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP05FN50I Specs

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AP05FN50I

AP05FN50I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast trr Performance D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.6 Simple Drive Requirement ID 4.5A G S Description AP05FN50 provide high blocking voltage to overcome voltage surge G and sag in the toughest power system with the best combination of fast D ... See More ⇒

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AP05FN50I

AP05FN50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast trr Performance D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.8 Simple Drive Requirement ID 4.4A G RoHS Compliant & Halogen-Free S Description AP05FN50 series are specially designed as main switching devices G for universal 90 265VAC off-line AC/D... See More ⇒

Detailed specifications: AP03N70H-H-HF , AP03N70I-H-HF , AP03N70J-H-HF , AP0403GH , AP04N60I-HF , AP04N60J-HF , AP04N70BI-A-HF , AP04N70BI-HF , SPP20N60C3 , AP05FN50I-HF , AP05N50I-HF , AP0803GMT-A-HF , AP0904GP-HF , AP09N20BGS-HF , AP09N70P-A-HF , AP09N70P-H-LF , AP1003BST .

Keywords - AP05FN50I MOSFET specs

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