AP09N70P-A-HF Datasheet and Replacement
Type Designator: AP09N70P-A-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 44 nC
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220
AP09N70P-A-HF substitution
AP09N70P-A-HF Datasheet (PDF)
ap09n70p-a-hf.pdf
AP09N70P-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.75 Simple Drive Requirement ID 9AG RoHS Compliant & Halogen-FreeSDescriptionAP09N70 series are from Advanced Power innovated designand silicon process technology to achieve the lowe
ap09n70p-a.pdf
AP09N70P-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Avalanche Test BVDSS 650VD Fast Switching RDS(ON) 0.75GG Simple Drive Requirement ID 9AS RoHS CompliantSDescriptionThe TO-220 package is widely preferred for all commercial-industrialapplications. The device is suited for DC-DC ,AC-DC converte
ap09n70p-h-lf ap09n70p-h.pdf
AP09N70P/R-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated D BVDSS 700V Fast Switching Characteristics RDS(ON) 0.85 Simple Drive Requirement ID 8.3AGSDescriptionGAP09N70 series are specially designed as main switching devices forTO-220(P)DSuniversal 90~265VAC off-line AC/DC converter app
ap09n70i-a.pdf
AP09N70I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effe
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