AP09N70P-A-HF datasheet, аналоги, основные параметры
Наименование производителя: AP09N70P-A-HF 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 156 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 170 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
Тип корпуса: TO220
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Аналог (замена) для AP09N70P-A-HF
- подборⓘ MOSFET транзистора по параметрам
AP09N70P-A-HF даташит
ap09n70p-a-hf.pdf
AP09N70P-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.75 Simple Drive Requirement ID 9A G RoHS Compliant & Halogen-Free S Description AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowe
ap09n70p-a.pdf
AP09N70P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Avalanche Test BVDSS 650V D Fast Switching RDS(ON) 0.75 GG Simple Drive Requirement ID 9A S RoHS Compliant S Description The TO-220 package is widely preferred for all commercial-industrial applications. The device is suited for DC-DC ,AC-DC converte
ap09n70p-h-lf ap09n70p-h.pdf
AP09N70P/R-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated D BVDSS 700V Fast Switching Characteristics RDS(ON) 0.85 Simple Drive Requirement ID 8.3A G S Description G AP09N70 series are specially designed as main switching devices for TO-220(P) D S universal 90 265VAC off-line AC/DC converter app
ap09n70i-a.pdf
AP09N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe
Другие IGBT... AP04N70BI-A-HF, AP04N70BI-HF, AP05FN50I, AP05FN50I-HF, AP05N50I-HF, AP0803GMT-A-HF, AP0904GP-HF, AP09N20BGS-HF, 5N65, AP09N70P-H-LF, AP1003BST, AP1004CMX, AP1005BSQ, AP10N70I-A, AP10P10GK-HF, AP11N50I-HF, AP1203GH
History: AP1003BST | WST3404A | SI5481DU | WSR25N20 | AP1605 | MSW16N50 | MSF20N50
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