All MOSFET. AP1005BSQ Datasheet

 

AP1005BSQ MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP1005BSQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.6 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: CHIP

 AP1005BSQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP1005BSQ Datasheet (PDF)

 ..1. Size:132K  ape
ap1005bsq.pdf

AP1005BSQ
AP1005BSQ

AP1005BSQHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 3.8m Low Profile (

 9.1. Size:104K  ape
ap1001bsq.pdf

AP1005BSQ
AP1005BSQ

AP1001BSQHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 6m Low Profile (

 9.2. Size:99K  ape
ap1002bmx.pdf

AP1005BSQ
AP1005BSQ

AP1002BMXHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 1.8m Low Profile (

 9.3. Size:158K  ape
ap1003bst.pdf

AP1005BSQ
AP1005BSQ

AP1003BSTPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 4.7m Low Profile (

 9.4. Size:133K  ape
ap1004cmx.pdf

AP1005BSQ
AP1005BSQ

AP1004CMXHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra-low Forward Diode D BVDSS 30V Low Conductance Loss RDS(ON) 1.8m Low Profile (

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History: KHB1D0N70G | PSMN1R7-25YLD | WMP07N65C2 | IRFD9024 | KF5N53D | KP509A9 | CEN2321A

 

 
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