AP1005BSQ MOSFET. Datasheet pdf. Equivalent
Type Designator: AP1005BSQ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16.6 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 570 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: CHIP
AP1005BSQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP1005BSQ Datasheet (PDF)
ap1005bsq.pdf
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: KHB1D0N70G | PSMN1R7-25YLD | WMP07N65C2 | IRFD9024 | KF5N53D | KP509A9 | CEN2321A
History: KHB1D0N70G | PSMN1R7-25YLD | WMP07N65C2 | IRFD9024 | KF5N53D | KP509A9 | CEN2321A
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918