All MOSFET. AP1802GU Datasheet

 

AP1802GU Datasheet and Replacement


   Type Designator: AP1802GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: CHIP
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AP1802GU Datasheet (PDF)

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AP1802GU

AP1802GU Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VDD Lower on-resistance RDS(ON) 32mDD Surface mount package ID 5.8AGSSS2021-8DescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve

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 ap1801gu.pdf pdf_icon

AP1802GU

AP1801GUPb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS -20VDD Lower on-resistance RDS(ON) 70m DDG Surface mount package ID -4ASSS2021-8DescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the

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History: IPG20N06S4L-11A | STP13N65M2 | 2SK3070S | SFF44N50S2 | SIHFP23N50L | 2SK2014 | AP99T06AGI-HF

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