All MOSFET. AP1802GU Datasheet

 

AP1802GU Datasheet and Replacement


   Type Designator: AP1802GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: CHIP
 

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AP1802GU Datasheet (PDF)

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AP1802GU

AP1802GU Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VDD Lower on-resistance RDS(ON) 32mDD Surface mount package ID 5.8AGSSS2021-8DescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve

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AP1802GU

AP1801GUPb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS -20VDD Lower on-resistance RDS(ON) 70m DDG Surface mount package ID -4ASSS2021-8DescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the

Datasheet: AP15N03GJ , AP15P10GP-HF , AP15P10GS-HF , AP15T03GJ , AP15T25H-HF , AP16N50P-HF , AP16N50W-HF , AP1801GU , 2N60 , AP18P10GH-HF , AP18P10GJ-HF , AP18T10GH , AP18T10GJ , AP1A003GMT-HF , AP6679BGJ-HF , AP6679GH , AP6679GI .

History: 2SK3707 | STP36NF06L | AOW12N60 | 11NM70G-TM3-T | HM4606D | 2SJ628 | AP2602GY

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