AP6679GJ PDF and Equivalents Search

 

AP6679GJ Specs and Replacement

Type Designator: AP6679GJ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 960 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO251

AP6679GJ substitution

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AP6679GJ datasheet

 ..1. Size:215K  ape
ap6679gh ap6679gj.pdf pdf_icon

AP6679GJ

AP6679GH/J RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suited for low voltage appl... See More ⇒

 0.1. Size:216K  ape
ap6679gh-hf ap6679gj-hf.pdf pdf_icon

AP6679GJ

AP6679GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G RoHS Compliant S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suit... See More ⇒

 7.1. Size:60K  ape
ap6679gp-a ap6679gs-a.pdf pdf_icon

AP6679GJ

AP6679GS/P-A Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-... See More ⇒

 7.2. Size:198K  ape
ap6679gs.pdf pdf_icon

AP6679GJ

AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi... See More ⇒

Detailed specifications: AP18P10GH-HF, AP18P10GJ-HF, AP18T10GH, AP18T10GJ, AP1A003GMT-HF, AP6679BGJ-HF, AP6679GH, AP6679GI, AO3400A, AP6679GP-A, AP6679GP-HF, AP6679GS, AP6679GS-A, AP6679GS-HF, AP6680AGM-HF, AP6680GM, AP6681GMT-HF

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