AP2305AGN PDF and Equivalents Search

 

AP2305AGN Specs and Replacement

Type Designator: AP2305AGN

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT23

AP2305AGN substitution

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AP2305AGN datasheet

 ..1. Size:59K  ape
ap2305agn.pdf pdf_icon

AP2305AGN

AP2305AGN Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80m D Surface Mount Device ID - 3.2A S SOT-23 G Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G , low on-resistance and cos... See More ⇒

 ..2. Size:866K  cn vbsemi
ap2305agn.pdf pdf_icon

AP2305AGN

AP2305AGN www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2... See More ⇒

 0.1. Size:79K  ape
ap2305agn-hf.pdf pdf_icon

AP2305AGN

AP2305AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80m D Surface Mount Device ID - 3.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistan... See More ⇒

 7.1. Size:1569K  cn apm
ap2305ai.pdf pdf_icon

AP2305AGN

AP2305AI -20V P-Channel Enhancement Mode MOSFET Description The AP2305AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-4.9A DS D R ... See More ⇒

Detailed specifications: AP20P02GJ, AP20T15GM-HF, AP2301AGN, AP2301EN-HF, AP2301GN, AP2302GN, AP2302N-HF, AP2303GN, IRFP064N, AP2306GN, AP2309GN, AP2310GN, AP2313GN, AP2320GN-HF, AP2320N-HF, AP2322GN-HF, AP2325GEU6-HF

Keywords - AP2305AGN MOSFET specs

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