All MOSFET. 2N7237 Datasheet

 

2N7237 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2N7237
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60(max) nC
   trⓘ - Rise Time: 85(max) nS
   Cossⓘ - Output Capacitance: 570 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.51 Ohm
   Package: TO254

 2N7237 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N7237 Datasheet (PDF)

 ..1. Size:192K  1
 2n7237.pdf

2N7237 2N7237

PD - 90497FIRFM9240JANTX2N7237JANTXV2N7237JANS2N7237POWER MOSFETREF:MIL-PRF-19500/595THRU-HOLE (TO-254AA) 200V, P-CHANNELProduct Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) IDIRFM9240 0.51 -11AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on

 9.1. Size:94K  1
 2n7236 2n7236u.pdf

2N7237 2N7237

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 DEVICES LEVELS 2N7236 2N7236U JANJANTXJANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltage VD

 9.2. Size:21K  semelab
 2n7236u.pdf

2N7237 2N7237

IRFN91402N7236UMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET VDSS 100V ID(cont) 18A RDS(on) 0.20FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE SIMPLE DRIVE REQUIREM

Datasheet: 2N7225 , 2N7227 , 2N7227JV , 2N7227JX , 2N7228 , 2N7228JV , 2N7228JX , 2N7236 , AO3401 , 2N7241 , 2N7242 , 2N7243 , 2N7244 , 2N7271H , 2N7271H1 , 2N7271H2 , 2N7271H3 .

History: 2N7066

 

 
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