AP2333EN-HF PDF and Equivalents Search

 

AP2333EN-HF Specs and Replacement

Type Designator: AP2333EN-HF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOT23S

AP2333EN-HF substitution

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AP2333EN-HF datasheet

 ..1. Size:57K  ape
ap2333en-hf.pdf pdf_icon

AP2333EN-HF

AP2333EN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 80m Surface Mount Device ID -2.9A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2333 series are from Advanced Power innovated design and G silicon process technology to achiev... See More ⇒

 9.1. Size:175K  ape
ap2330gn.pdf pdf_icon

AP2333EN-HF

AP2330GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7A G RoHS Compliant & Halogen-Free S D Description AP2330 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos... See More ⇒

 9.2. Size:93K  ape
ap2336gn-hf.pdf pdf_icon

AP2333EN-HF

AP2336GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.8A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ext... See More ⇒

 9.3. Size:177K  ape
ap2338gn.pdf pdf_icon

AP2333EN-HF

AP2338GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 35m Surface Mount Device ID 5A S Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2338 series are from Advanced Power innovated design and silicon process technology to achieve... See More ⇒

Detailed specifications: AP2306GN, AP2309GN, AP2310GN, AP2313GN, AP2320GN-HF, AP2320N-HF, AP2322GN-HF, AP2325GEU6-HF, IRF540, AP2336GN-HF, AP2340GN-HF, AP2346GN-HF, AP2451GY, AP2531GY-HF, AP25T03GJ, AP2602GY-HF, AP2603GY

Keywords - AP2333EN-HF MOSFET specs

 AP2333EN-HF cross reference

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