All MOSFET. IRFI840GLC Datasheet

 

IRFI840GLC MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFI840GLC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39(max) nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220F

 IRFI840GLC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFI840GLC Datasheet (PDF)

 ..1. Size:225K  international rectifier
 irfi840glc.pdf

IRFI840GLC IRFI840GLC

 ..2. Size:1023K  international rectifier
 irfi840glcpbf.pdf

IRFI840GLC IRFI840GLC

PD - 94865IRFI840GLCPbF Lead-Free12/4/03Document Number: 91160 www.vishay.com1IRFI840GLCPbFDocument Number: 91160 www.vishay.com2IRFI840GLCPbFDocument Number: 91160 www.vishay.com3IRFI840GLCPbFDocument Number: 91160 www.vishay.com4IRFI840GLCPbFDocument Number: 91160 www.vishay.com5IRFI840GLCPbFDocument Number: 91160 www.vishay.com6IRFI840GLCPbF

 ..3. Size:1651K  vishay
 irfi840glcpbf sihfi840glc.pdf

IRFI840GLC IRFI840GLC

IRFI840GLC, SiHFI840GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 39COMPLIANT Isolated PackageQgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)Qgd (nC) 19 Sink to Lead Cr

 ..4. Size:1649K  vishay
 irfi840glc sihfi840glc.pdf

IRFI840GLC IRFI840GLC

IRFI840GLC, SiHFI840GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 39COMPLIANT Isolated PackageQgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)Qgd (nC) 19 Sink to Lead Cr

 6.1. Size:1303K  international rectifier
 irfi840gpbf.pdf

IRFI840GLC IRFI840GLC

PD - 94864IRFI840GPbF Lead-Freewww.irf.com 112/03/03IRFI840GPbF2 www.irf.comIRFI840GPbFwww.irf.com 3IRFI840GPbF4 www.irf.comIRFI840GPbFwww.irf.com 5IRFI840GPbF6 www.irf.comIRFI840GPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking InformationE XAMP L E : T H IS IS AN IR F I84 0G WIT H AS S E

 6.2. Size:169K  international rectifier
 irfi840g.pdf

IRFI840GLC IRFI840GLC

 6.3. Size:2785K  vishay
 irfi840g sihfi840g.pdf

IRFI840GLC IRFI840GLC

IRFI840G, SiHFI840GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s,RDS(on) ()VGS = 10 V 0.85f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 34 Low Thermal ResistanceConfiguration Si

 6.4. Size:825K  cn vbsemi
 irfi840gpbf.pdf

IRFI840GLC IRFI840GLC

IRFI840GPBFwww.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC)57 Ultra low gate charge (Qg)Qgs (nC)4.0 Avalanche energy rated (UIS)Qgd (nC) 5.4Configur

Datasheet: IRFI740GLC , IRFI744G , IRFI820A , IRFI820G , IRFI830A , IRFI830G , IRFI840A , IRFI840G , IRFB7545 , IRFI9520N , IRFI9530G , IRFI9540N , IRFI9620G , IRFI9630G , IRFI9634G , IRFI9640G , IRFI9Z24N .

 

 
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