AP2R803GS-HF PDF and Equivalents Search

 

AP2R803GS-HF Specs and Replacement

Type Designator: AP2R803GS-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO263

AP2R803GS-HF substitution

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AP2R803GS-HF datasheet

 ..1. Size:125K  ape
 ap2r803gs-hf.pdf pdf_icon

AP2R803GS-HF

AP2R803GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedize... See More ⇒

 6.1. Size:93K  ape
 ap2r803gh.pdf pdf_icon

AP2R803GS-HF

AP2R803GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best G D combination of fast switching, ruggedized device design, low on-resista... See More ⇒

 6.2. Size:59K  ape
 ap2r803gmt-hf.pdf pdf_icon

AP2R803GS-HF

AP2R803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 3m Low On-resistance ID 105A G RoHS Compliant & Halogen-Free S D D D D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged... See More ⇒

 6.3. Size:137K  ape
 ap2r803gjb.pdf pdf_icon

AP2R803GS-HF

AP2R803GJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID3 75A G RoHS Compliant & Halogen-Free S Description AP2R803 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p... See More ⇒

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Detailed specifications: AP2625GY-HF, AP2732GK-HF, AP2761I-A-HF, AP2762I-A, AP2764AP-A, AP2764I-A-HF, AP2R803GH, AP2R803GM-HF, IRFP250N, AP30P10GS-HF, AP3310GJ, AP3801GM-HF, AP3989I-HF, AP3R604GH, AP4002H-HF, AP4002J-HF, AP4002T

Keywords - AP2R803GS-HF MOSFET specs

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