AP2R803GS-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP2R803GS-HF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 790 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: TO263
Аналог (замена) для AP2R803GS-HF
AP2R803GS-HF Datasheet (PDF)
ap2r803gs-hf.pdf

AP2R803GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedize
ap2r803gh.pdf

AP2R803GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGDcombination of fast switching, ruggedized device design, low on-resista
ap2r803gmt-hf.pdf

AP2R803GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 3m Low On-resistance ID 105AG RoHS Compliant & Halogen-FreeSDDDDDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged
ap2r803gjb.pdf

AP2R803GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID3 75AG RoHS Compliant & Halogen-FreeSDescriptionAP2R803 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
Другие MOSFET... AP2625GY-HF , AP2732GK-HF , AP2761I-A-HF , AP2762I-A , AP2764AP-A , AP2764I-A-HF , AP2R803GH , AP2R803GM-HF , AON7408 , AP30P10GS-HF , AP3310GJ , AP3801GM-HF , AP3989I-HF , AP3R604GH , AP4002H-HF , AP4002J-HF , AP4002T .
History: PDC3907Z | BUZ77B | IPAN60R210PFD7S | P6503FMA | SIHF730 | 2N65L-TF2-T | STP4NK50ZFP
History: PDC3907Z | BUZ77B | IPAN60R210PFD7S | P6503FMA | SIHF730 | 2N65L-TF2-T | STP4NK50ZFP



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
irfb4227 | irfb4110 | tip36c | bd139 transistor | irf840 datasheet | ge10001 | irf830 | irfp450