All MOSFET. AP9980GJ-HF Datasheet

 

AP9980GJ-HF Datasheet and Replacement


   Type Designator: AP9980GJ-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 21.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO251
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AP9980GJ-HF Datasheet (PDF)

 ..1. Size:100K  ape
 ap9980gh-hf ap9980gj-hf.pdf pdf_icon

AP9980GJ-HF

AP9980GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast switching,TO-

 6.1. Size:218K  ape
 ap9980gj.pdf pdf_icon

AP9980GJ-HF

AP9980GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AGSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switching,ruggedized device design, lo

 7.1. Size:233K  ape
 ap9980gh-hf.pdf pdf_icon

AP9980GJ-HF

AP9980GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AG RoHS Compliant & Halogen-FreeSDescriptionAP9980 series are from Advanced Power innovated design andGDSsilicon process technology to achieve the lowe

 7.2. Size:209K  ape
 ap9980gm.pdf pdf_icon

AP9980GJ-HF

AP9980GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD2D2 Single Drive Requirement RDS(ON) 52mD1D1 Surface Mount Package ID 4.6AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide the D1designer with the best combination of fast switching,ruggedized device d

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History: RJK0331DPB-00

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