AP9980GJ-HF Specs and Replacement

Type Designator: AP9980GJ-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 21.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO251

AP9980GJ-HF substitution

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AP9980GJ-HF datasheet

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ap9980gh-hf ap9980gj-hf.pdf pdf_icon

AP9980GJ-HF

AP9980GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-... See More ⇒

 6.1. Size:218K  ape
ap9980gj.pdf pdf_icon

AP9980GJ-HF

AP9980GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switching, ruggedized device design, lo... See More ⇒

 7.1. Size:233K  ape
ap9980gh-hf.pdf pdf_icon

AP9980GJ-HF

AP9980GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description AP9980 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lowe... See More ⇒

 7.2. Size:209K  ape
ap9980gm.pdf pdf_icon

AP9980GJ-HF

AP9980GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 Single Drive Requirement RDS(ON) 52m D1 D1 Surface Mount Package ID 4.6A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device d... See More ⇒

Detailed specifications: AP9971AGH-HF, AP9971AGJ-HF, AP9971AGS-HF, AP9971GH-HF, AP9971GJ-HF, AP9974GS, AP9977AGH-HF, AP9980GH-HF, 20N60, AP9980GM-HF, AP9915GK, AP9916GH, AP9916GJ, AP9918GH, AP9938GEY-HF, AP9938GEYT-HF, AP9960GH-HF

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