AP9980GJ-HF. Аналоги и основные параметры

Наименование производителя: AP9980GJ-HF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 41.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 21.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20 ns

Cossⓘ - Выходная емкость: 135 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm

Тип корпуса: TO251

Аналог (замена) для AP9980GJ-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP9980GJ-HF даташит

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 ap9980gh-hf ap9980gj-hf.pdf pdf_icon

AP9980GJ-HF

AP9980GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-

 6.1. Size:218K  ape
 ap9980gj.pdf pdf_icon

AP9980GJ-HF

AP9980GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switching, ruggedized device design, lo

 7.1. Size:233K  ape
 ap9980gh-hf.pdf pdf_icon

AP9980GJ-HF

AP9980GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description AP9980 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lowe

 7.2. Size:209K  ape
 ap9980gm.pdf pdf_icon

AP9980GJ-HF

AP9980GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 Single Drive Requirement RDS(ON) 52m D1 D1 Surface Mount Package ID 4.6A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device d

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