AP9916GJ Datasheet and Replacement
Type Designator: AP9916GJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 98 nS
Cossⓘ - Output Capacitance: 258 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO251
AP9916GJ substitution
AP9916GJ Datasheet (PDF)
ap9916gh ap9916gj.pdf

AP9916GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 18V DCapable of 2.5V gate drive RDS(ON) 25m Low drive current ID 35A GSurface mount package SDescriptionGThe Advanced Power MOSFETs from APEC provide theDS TO-25
ap9916h-j.pdf

AP9916H/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 18V DCapable of 2.5V gate drive RDS(ON) 25m Low drive current ID 35A GSingle Drive Requirement SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with th
ap9918h ap9918j.pdf

AP9918H/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A GSurface mount package SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the b
ap9915h ap9915j.pdf

AP9915H/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 50m Low drive current ID 20A GSingle Drive Requirement SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with th
Datasheet: AP9971GJ-HF , AP9974GS , AP9977AGH-HF , AP9980GH-HF , AP9980GJ-HF , AP9980GM-HF , AP9915GK , AP9916GH , IRFP460 , AP9918GH , AP9938GEY-HF , AP9938GEYT-HF , AP9960GH-HF , AP9960GJ-HF , AP70T03AH , AP70T03AJ , AP70T03AS .
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