AP4835GM-HF Datasheet and Replacement
Type Designator: AP4835GM-HF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 9.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6.6 nS
Cossⓘ - Output Capacitance: 195 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SO8
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AP4835GM-HF Datasheet (PDF)
ap4835gm-hf.pdf

AP4835GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 20mD Fast Switching ID -9.2AG RoHS Compliant SSSO-8 SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized devic
ap4835gm.pdf

AP4835GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 20mD Fast Switching ID -9.2AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-re
ap4835gmt-hf.pdf

AP4835GMT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V SO-8 Compatible RDS(ON) 21m Low On-resistance ID -32AG RoHS Compliant & Halogen-FreeSDDDDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,rugged
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 5N65KG-TND-R | AP4532GM
Keywords - AP4835GM-HF MOSFET datasheet
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History: 5N65KG-TND-R | AP4532GM



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