All MOSFET. AP4880GEM Datasheet

 

AP4880GEM Datasheet and Replacement


   Type Designator: AP4880GEM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SO8
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AP4880GEM Datasheet (PDF)

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AP4880GEM

AP4880GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VDD Fast Switching Characteristic RDS(ON) 8.5mDD Low On-resistance ID 14AG RoHS CompliantSSSSO-8DescriptionDThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast swit

 7.1. Size:81K  ape
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AP4880GEM

AP4880GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 25V DDFast Switching D RDS(ON) 8.5m DSimple Drive Requirement ID 13A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination o

 8.1. Size:60K  ape
 ap4880bgm-hf.pdf pdf_icon

AP4880GEM

AP4880BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,r

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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