AP4880GEM Datasheet and Replacement
Type Designator: AP4880GEM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 490 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: SO8
AP4880GEM substitution
AP4880GEM Datasheet (PDF)
ap4880gem.pdf

AP4880GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VDD Fast Switching Characteristic RDS(ON) 8.5mDD Low On-resistance ID 14AG RoHS CompliantSSSSO-8DescriptionDThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast swit
ap4880gm.pdf

AP4880GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 25V DDFast Switching D RDS(ON) 8.5m DSimple Drive Requirement ID 13A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination o
ap4880bgm-hf.pdf

AP4880BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,r
Datasheet: AP72T03GJ-HF , AP72T03GP , AP75T10GS-HF , AP76T03AGMT-HF , AP7811GM , AP4800AGM , AP4816GSM , AP4835GM-HF , IRF9540 , AP4953GM , AP4955GM-HF , AP4957AGM-HF , AP50T03GH , AP50T03GJ , AP5523GM-HF , AP9575GH , AP9575GI .
History: UTT24N06G-TM3-T | IGOT60R070D1
Keywords - AP4880GEM MOSFET datasheet
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History: UTT24N06G-TM3-T | IGOT60R070D1



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