AP5523GM-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP5523GM-HF
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2(2.5) A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26(0.16) Ohm
Package: SO8
AP5523GM-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP5523GM-HF Datasheet (PDF)
ap5523gm-hf.pdf
AP5523GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100VD2D2 Low Gate Charge D1 RDS(ON) 260mD1 Fast Switching Performance ID 2AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -100VG1S1SO-8RDS(ON) 160mDescription ID -2.5AAP5523 series are from Advanced Po
ap5521gh-hf.pdf
AP5521GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100VD1/D2 Good Thermal Performance RDS(ON) 150m Fast Switching Performance ID 3.1AS1 RoHS Compliant & Halogen-Free P-CH BVDSS -100VG1S2RDS(ON) 155mG2Description ID -3.2ATO-252-4LAdvanced Power MOSFETs fro
ap5521gm-hf.pdf
AP5521GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100VD2D2 Low Gate Charge D1 RDS(ON) 150mD1 Fast Switching Performance ID 2.5AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -100VG1S1SO-8RDS(ON) 160mDescription ID -2.5AAdvanced Power MOSFETs from APEC
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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