All MOSFET. IRFIBC40G Datasheet

 

IRFIBC40G MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFIBC40G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60(max) nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F

 IRFIBC40G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFIBC40G Datasheet (PDF)

 ..1. Size:912K  international rectifier
 irfibc40g.pdf

IRFIBC40G IRFIBC40G

PD - 94857IRFIBC40GPbF Lead-Free11/20/03Document Number: 91182 www.vishay.com1IRFIBC40GPbFDocument Number: 91182 www.vishay.com2IRFIBC40GPbFDocument Number: 91182 www.vishay.com3IRFIBC40GPbFDocument Number: 91182 www.vishay.com4IRFIBC40GPbFDocument Number: 91182 www.vishay.com5IRFIBC40GPbFDocument Number: 91182 www.vishay.com6IRFIBC40GPbFTO-

 ..2. Size:1441K  vishay
 irfibc40g sihfibc40g.pdf

IRFIBC40G IRFIBC40G

IRFIBC40G, SiHFIBC40GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available Low Thermal ResistanceRDS(on) ()VGS = 10 V 1.2RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 8.3f = 60 Hz)Qgd (nC) 30 Dynamic dV/dt RatingConfiguration Sing

 ..3. Size:275K  inchange semiconductor
 irfibc40g.pdf

IRFIBC40G IRFIBC40G

iscN-Channel MOSFET Transistor IRFIBC40GFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 0.1. Size:229K  international rectifier
 irfibc40glc.pdf

IRFIBC40G IRFIBC40G

 0.2. Size:993K  international rectifier
 irfibc40glcpbf.pdf

IRFIBC40G IRFIBC40G

PD - 94860IRFIBC40GLCPbF Lead-Free12/03/03Document Number: 91181 www.vishay.com1IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com2IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com3IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com4IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com5IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com6IRFIBC

 0.3. Size:1601K  vishay
 irfibc40glc sihfibc40glc.pdf

IRFIBC40G IRFIBC40G

IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfigurati

 0.4. Size:275K  inchange semiconductor
 irfibc40glc.pdf

IRFIBC40G IRFIBC40G

iscN-Channel MOSFET Transistor IRFIBC40GLCFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: IRFI9640G , IRFI9Z24N , IRFI9Z34N , IRFIB5N65A , IRFIB6N60A , IRFIB7N50A , IRFIBC20G , IRFIBC30G , IRF540N , IRFIBC40GLC , IRFIBE20G , IRFIBE30G , IRFIBF20G , IRFIBF30G , IRFIZ14A , IRFIZ24A , IRFIZ24E .

 

 
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