All MOSFET. AP9412BGM Datasheet

 

AP9412BGM Datasheet and Replacement


   Type Designator: AP9412BGM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 26 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SO8
 

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AP9412BGM Datasheet (PDF)

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 ap9412bgm.pdf pdf_icon

AP9412BGM

AP9412BGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 6mD Fast Switching Characteristic ID 18AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching, ruggedized device desig

 0.1. Size:93K  ape
 ap9412bgm-hf.pdf pdf_icon

AP9412BGM

AP9412BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 6mD Fast Switching Characteristic ID 18AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fas

 8.1. Size:94K  ape
 ap9412agm-hf.pdf pdf_icon

AP9412BGM

AP9412AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Ultra_Low On-resistance RDS(ON) 6mDD Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-Free SSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination o

 8.2. Size:64K  ape
 ap9412gh ap9412gj.pdf pdf_icon

AP9412BGM

AP9412GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 73AGSDescriptionThe Advanced Power MOSFETs from APEC provide the designer with GDSthe best combination of fast switching, ruggedized device design, low

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History: FDS6679

Keywords - AP9412BGM MOSFET datasheet

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