AP9412BGM PDF and Equivalents Search

 

AP9412BGM Specs and Replacement

Type Designator: AP9412BGM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SO8

AP9412BGM substitution

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AP9412BGM datasheet

 ..1. Size:93K  ape
ap9412bgm.pdf pdf_icon

AP9412BGM

AP9412BGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 6m D Fast Switching Characteristic ID 18A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig... See More ⇒

 0.1. Size:93K  ape
ap9412bgm-hf.pdf pdf_icon

AP9412BGM

AP9412BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 6m D Fast Switching Characteristic ID 18A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas... See More ⇒

 8.1. Size:94K  ape
ap9412agm-hf.pdf pdf_icon

AP9412BGM

AP9412AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 6m D D Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o... See More ⇒

 8.2. Size:64K  ape
ap9412gh ap9412gj.pdf pdf_icon

AP9412BGM

AP9412GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 73A G S Description The Advanced Power MOSFETs from APEC provide the designer with G D S the best combination of fast switching, ruggedized device design, low ... See More ⇒

Detailed specifications: AP60T03GJ, AP60T10GP-HF, AP60T10GS-HF, AP60U02GH, AP60U03GH, AP62T02GJ, AP9410GM-HF, AP9412AGM, IRF1407, AP9435GJ-HF, AP9435GM, AP9435GP-HF, AP9450GMT-HF, AP9468GM-HF, AP9474GM-HF, AP9477GM, AP9561GM-HF

Keywords - AP9412BGM MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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