All MOSFET. AP9565AGJ-HF Datasheet

 

AP9565AGJ-HF Datasheet and Replacement


   Type Designator: AP9565AGJ-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 18.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO251
 

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AP9565AGJ-HF Datasheet (PDF)

 ..1. Size:98K  ape
 ap9565agh-hf ap9565agj-hf.pdf pdf_icon

AP9565AGJ-HF

AP9565AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switchi

 5.1. Size:97K  ape
 ap9565agh ap9565agj.pdf pdf_icon

AP9565AGJ-HF

AP9565AGH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSdesigner with the best combination of fast switching, TO-252(H)ruggedized device de

 8.1. Size:89K  ape
 ap9565gem.pdf pdf_icon

AP9565AGJ-HF

AP9565GEMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Fast Switching Characteristic RDS(ON) 38mD RoHS Compliant ID -6.5AGSSSSO-8DDescriptionGThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized de

 8.2. Size:96K  ape
 ap9565bgh-hf ap9565bgj-hf.pdf pdf_icon

AP9565AGJ-HF

AP9565BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSbest combination of fast switching,

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Datasheet: AP9450GMT-HF , AP9468GM-HF , AP9474GM-HF , AP9477GM , AP9561GM-HF , AP9563GK-HF , AP9564GM-HF , AP9565AGH-HF , AON6380 , AP9566GM-HF , AP6900GH-HF , AP6900GSM-HF , AP6901GH-HF , AP6902GH-HF , AP6905GH-HF , AP6907GH-HF , AP6923O .

Keywords - AP9565AGJ-HF MOSFET datasheet

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