Справочник MOSFET. AP9565AGJ-HF

 

AP9565AGJ-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP9565AGJ-HF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 34 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP9565AGJ-HF

 

 

AP9565AGJ-HF Datasheet (PDF)

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 ap9565agh-hf ap9565agj-hf.pdf

AP9565AGJ-HF AP9565AGJ-HF

AP9565AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switchi

 5.1. Size:97K  ape
 ap9565agh ap9565agj.pdf

AP9565AGJ-HF AP9565AGJ-HF

AP9565AGH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSdesigner with the best combination of fast switching, TO-252(H)ruggedized device de

 8.1. Size:89K  ape
 ap9565gem.pdf

AP9565AGJ-HF AP9565AGJ-HF

AP9565GEMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Fast Switching Characteristic RDS(ON) 38mD RoHS Compliant ID -6.5AGSSSSO-8DDescriptionGThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized de

 8.2. Size:96K  ape
 ap9565bgh-hf ap9565bgj-hf.pdf

AP9565AGJ-HF AP9565AGJ-HF

AP9565BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSbest combination of fast switching,

 8.3. Size:73K  ape
 ap9565bgm-hf-pre.pdf

AP9565AGJ-HF AP9565AGJ-HF

AP9565BGM-HFPreliminaryAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 52mD Fast Switching Characteristic ID -5.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast swi

 8.4. Size:131K  ape
 ap9565geh ap9565gej.pdf

AP9565AGJ-HF AP9565AGJ-HF

AP9565GEH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Lower On-resistance RDS(ON) 38mG Fast Switching Characteristic ID -24ASDescriptionGDAdvanced Power MOSFETs from APEC provide theS TO-252(H)designer with the best combination of fast switching,ruggedized device de

 8.5. Size:98K  ape
 ap9565bgh j-hf.pdf

AP9565AGJ-HF AP9565AGJ-HF

AP9565BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSbest combination of fast switching

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