IRF232 Datasheet. Specs and Replacement

Type Designator: IRF232  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO3

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IRF232 substitution

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IRF232 datasheet

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PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40 9.0A TO-3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique... See More ⇒

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Detailed specifications: AP90T03GS, AP90T03P-HF, AP90T10GP-HF, AP92LT10GP-HF, AP92T03GH, AP92T03GS, AP93T03AGH-HF, IRF231, AON6426, IRF233, IRF240SMD, IRF241, IRF242, IRF243, IRF250B, IRF250C, IRF250SMD

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs