IRF233 Specs and Replacement
Type Designator: IRF233
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3
IRF233 substitution
- MOSFET ⓘ Cross-Reference Search
IRF233 datasheet
irf630 irf631 irf632 irf633 irf230 irf231 irf232 irf233 mtp12n18 mtp12n20.pdf
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2n6758 irf230.pdf
PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40 9.0A TO-3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique... See More ⇒
Detailed specifications: AP90T03P-HF, AP90T10GP-HF, AP92LT10GP-HF, AP92T03GH, AP92T03GS, AP93T03AGH-HF, IRF231, IRF232, AO4468, IRF240SMD, IRF241, IRF242, IRF243, IRF250B, IRF250C, IRF250SMD, IRF251
Keywords - IRF233 MOSFET specs
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