All MOSFET. IRF240SMD Datasheet

 

IRF240SMD MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF240SMD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 152 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO276AB

 IRF240SMD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF240SMD Datasheet (PDF)

 ..1. Size:22K  semelab
 irf240smd.pdf

IRF240SMD IRF240SMD

IRF240SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

 8.1. Size:146K  international rectifier
 irf240.pdf

IRF240SMD IRF240SMD

PD - 90370REPETITIVE AVALANCHE AND dv/dt RATEDHEXFETTRANSISTORS IRF240THRU-HOLE (TO-204AA/AE)200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF240 200V 0.18 18AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a

 8.2. Size:215K  samsung
 irf240 irf241 irf242 irf243.pdf

IRF240SMD IRF240SMD

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFR012

 

 
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