All MOSFET. IRFIBF20G Datasheet

 

IRFIBF20G MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFIBF20G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 1.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 38 nC

Maximum Drain-Source On-State Resistance (Rds): 8 Ohm

Package: TO220

IRFIBF20G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFIBF20G Datasheet (PDF)

1.1. irfibf20g.pdf Size:168K _international_rectifier

IRFIBF20G
IRFIBF20G

1.2. irfibf20gpbf.pdf Size:1034K _international_rectifier

IRFIBF20G
IRFIBF20G

PD- 95650 IRFIBF20GPbF Lead-Free 7/26/04 Document Number: 91185 www.vishay.com 1 IRFIBF20GPbF Document Number: 91185 www.vishay.com 2 IRFIBF20GPbF Document Number: 91185 www.vishay.com 3 IRFIBF20GPbF Document Number: 91185 www.vishay.com 4 IRFIBF20GPbF Document Number: 91185 www.vishay.com 5 IRFIBF20GPbF Document Number: 91185 www.vishay.com 6 IRFIBF20GPbF Peak Diode

 1.3. irfibf20g sihfibf20g.pdf Size:1680K _vishay

IRFIBF20G
IRFIBF20G

IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 900 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 8.0 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 4.7 Low Thermal Resistance Qgd (nC) 21 Lead (Pb)-free Available Configuration Single DESCRIPTION D Third

Datasheet: IRFIB6N60A , IRFIB7N50A , IRFIBC20G , IRFIBC30G , IRFIBC40G , IRFIBC40GLC , IRFIBE20G , IRFIBE30G , IRF630 , IRFIBF30G , IRFIZ14A , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N .

 

 
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