IRF242 Datasheet and Replacement
Type Designator: IRF242
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 360 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: TO3
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IRF242 Datasheet (PDF)
irf240.pdf

PD - 90370REPETITIVE AVALANCHE AND dv/dt RATEDHEXFETTRANSISTORS IRF240THRU-HOLE (TO-204AA/AE)200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF240 200V 0.18 18AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a
irf240smd.pdf

IRF240SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IPB60R045P7 | HLML6401 | CS1N70SU | HU60P03 | SM6A08NSU | CS27P06 | AP85T03GH-HF
Keywords - IRF242 MOSFET datasheet
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History: IPB60R045P7 | HLML6401 | CS1N70SU | HU60P03 | SM6A08NSU | CS27P06 | AP85T03GH-HF



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