IRF243 MOSFET Datasheet: N-Ch, 150V, 16A. Full specification with pinout and replacement list

IRF243 Specs and Replacement

Type Designator: IRF243

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO3

IRF243 substitution

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IRF243 datasheet

..1. Size:215K samsung
irf240 irf241 irf242 irf243.pdf pdf_icon

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9.1. Size:146K international rectifier
irf240.pdf pdf_icon

PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRF240 THRU-HOLE (TO-204AA/AE) 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF240 200V 0.18 18A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design a... See More ⇒

9.2. Size:22K semelab
irf240smd.pdf pdf_icon

IRF240SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS ... See More ⇒

Detailed specifications: AP92T03GS, AP93T03AGH-HF, IRF231, IRF232, IRF233, IRF240SMD, IRF241, IRF242, IRF740, IRF250B, IRF250C, IRF250SMD, IRF251, IRF252, IRF253, IRF320, IRF3205A