IRF250SMD MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF250SMD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 115 nC
trⓘ - Rise Time: 190 nS
Cossⓘ - Output Capacitance: 700 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO276AB
IRF250SMD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF250SMD Datasheet (PDF)
irf250smd.pdf
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IRF250SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS
2n6766 irf250.pdf
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PD - 90338EIRF250REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766HEXFETTRANSISTORS JANTXV2N6766THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF250 200V 0.085 30AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-3The efficient geometry and unique
irf250p224.pdf
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IRF250P224 MOSFET StrongIRFET V 250V D DSS RDS(on) typ. 9.0m GApplications max 12m UPS and Inverter applications SI 128A D Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits
irf250p225.pdf
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IRF250P225 IR MOSFET - StrongIRFET V 250V D DSS RDS(on) typ. 18m Gmax 22m Applications SI 69A D UPS and Inverter applications Half-bridge and full-bridge topologies D Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches S D Brushed and BLDC Motor drive applications G TO-247AC
irf250b irf250c.pdf
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RoHS IRF250 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET30A, 200VoltsDESCRIPTIOND The Nell IRF250 is a three-terminal silicon devicewith current conduction capability of 30A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G
irf250p224.pdf
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isc N-Channel MOSFET Transistor IRF250P224IIRF250P224FEATURESStatic drain-source on-resistance:RDS(on)12mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
irf250p225.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF250P225IIRF250P225FEATURESStatic drain-source on-resistance:RDS(on)22mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .