IRF250SMD - описание и поиск аналогов

IRF250SMD MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS

PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085 30A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique

IRF250P224 MOSFET StrongIRFET V 250V D DSS R DS(on) typ. 9.0m G Applications max 12m UPS and Inverter applications S I 128A D Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits

IRF250P225 IR MOSFET - StrongIRFET V 250V D DSS R DS(on) typ. 18m G max 22m Applications S I 69A D UPS and Inverter applications Half-bridge and full-bridge topologies D Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches S D Brushed and BLDC Motor drive applications G TO-247AC

RoHS IRF250 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 30A, 200Volts DESCRIPTION D The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

isc N-Channel MOSFET Transistor IRF250P224 IIRF250P224 FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION OR-ring and redundant power switches ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF250P225 IIRF250P225 FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION OR-ring and redundant power switches ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA