All MOSFET. IRFIZ24A Datasheet

 

IRFIZ24A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFIZ24A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 44 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 600 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: I2PAK

IRFIZ24A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFIZ24A Datasheet (PDF)

3.1. irfiz24npbf.pdf Size:213K _international_rectifier

IRFIZ24A
IRFIZ24A

PD - 94808 IRFIZ24NPbF HEXFET® Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.07Ω Fully Avalanche Rated G Lead-Free Description ID = 14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

3.2. irfiz24g.pdf Size:919K _international_rectifier

IRFIZ24A
IRFIZ24A

PD - 94875 IRFIZ24GPbF Lead-Free 12/9/03 Document Number: 91187 www.vishay.com 1 IRFIZ24GPbF Document Number: 91187 www.vishay.com 2 IRFIZ24GPbF Document Number: 91187 www.vishay.com 3 IRFIZ24GPbF Document Number: 91187 www.vishay.com 4 IRFIZ24GPbF Document Number: 91187 www.vishay.com 5 IRFIZ24GPbF Document Number: 91187 www.vishay.com 6 IRFIZ24GPbF TO-220 Full-Pak P

 3.3. irfiz24g irfiz24gpbf.pdf Size:1555K _international_rectifier

IRFIZ24A
IRFIZ24A

IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 10 V 0.10 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 25 • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.8 • 175 °C Operating Temperature Qgd (nC) 11 • Dynamic dV/dt Rating • Low Ther

3.4. irfiz24e.pdf Size:114K _international_rectifier

IRFIZ24A
IRFIZ24A

PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.071? Fully Avalanche Rated G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resistance per silico

 3.5. irfiz24v.pdf Size:83K _international_rectifier

IRFIZ24A
IRFIZ24A

PD - 94102 IRFIZ24V Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175C Operating Temperature Fast Switching RDS(on) = 0.060? Fully Avalanche Rated G Optimized for SMPS Applications Description ID = 14A S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

3.6. irfiz24epbf.pdf Size:225K _international_rectifier

IRFIZ24A
IRFIZ24A

PD - 95594 IRFIZ24EPbF HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS … VDSS = 60V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.071Ω l Lead-Free G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely

3.7. irfiz24n.pdf Size:105K _international_rectifier

IRFIZ24A
IRFIZ24A

PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resistance per silicon

3.8. irfiz24g sihfiz24g.pdf Size:1554K _vishay

IRFIZ24A
IRFIZ24A

IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 0.10 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.8 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt Rating Low Thermal Resistance C

3.9. irfiz24n.pdf Size:201K _inchange_semiconductor

IRFIZ24A
IRFIZ24A

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ24N ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T

Datasheet: IRFIBC30G , IRFIBC40G , IRFIBC40GLC , IRFIBE20G , IRFIBE30G , IRFIBF20G , IRFIBF30G , IRFIZ14A , IRF530 , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRFIZ44N , IRFIZ46N .

 

 
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