IRF3546M MOSFET Datasheet: N-Ch, 25V, 16A. Full specification with pinout and replacement list

IRF3546M Specs and Replacement

Type Designator: IRF3546M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 950 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: PQFN

IRF3546M substitution

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IRF3546M datasheet

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irf3546m.pdf pdf_icon

60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block co- FEATURES packages two pairs of high performance control and synchronous MOSFETs and is ideal for use in high- Peak efficiency up to 94% at 1.2V density two-phase synchronous buck converters. It is Two pairs of control and synchronous optimized internally for PCB layout, heat transfer and ... See More ⇒

9.1. Size:144K international rectifier
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PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒

9.2. Size:126K international rectifier
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PD- 91899B IRF3515S SMPS MOSFET IRF3515L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 150V 0.045 41A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage ... See More ⇒

9.3. Size:223K international rectifier
auirf3504.pdf pdf_icon

PD - 97696A AUTOMOTIVE GRADE AUIRF3504 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l 175 C Operating Temperature RDS(on) typ. l Fast Switching 7.8m l Fully Avalanche Rated G max 9.2m l Repetitive Avalanche Allowed S ID 87A up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description Specifically des... See More ⇒