IRF3546M Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRF3546M
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 950 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm
Тип корпуса: PQFN
- подбор MOSFET транзистора по параметрам
IRF3546M Datasheet (PDF)
irf3546m.pdf

60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block co-FEATURES packages two pairs of high performance control and synchronous MOSFETs and is ideal for use in high- Peak efficiency up to 94% at 1.2V density two-phase synchronous buck converters. It is Two pairs of control and synchronous optimized internally for PCB layout, heat transfer and
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PD - 97696AAUTOMOTIVE GRADEAUIRF3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance DV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Rated G max 9.2ml Repetitive Avalanche AllowedSID87Aup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionSpecifically des
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History: MCH3484 | DMN30H4D0L
History: MCH3484 | DMN30H4D0L



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